Specifications
-Essentials
Capacity 160 GB
Lithography Type 25 nm
Recommended Customer Price N/A
-Performance
Sequential Read (up to) 270 MB/s
Sequential Write (up to) 165 MB/s
Random Read (8GB Span) (up to) 39000 IOPS
Random Read (100% Span) 39000 IOPS
Random Write (8GB Span) (up to) 21000 IOPS
Random Write (100% Span) 600 IOPS
Latency - Read 75 µs
Latency - Write 90 µs
Power - Active 150 mw (MobileMark 2007 Workload), 3.0 W (64K Sequential Write)
Power - Idle 100 mw (DIPM), .7 W (Non-DIPM)
-Reliability
Vibration - Operating 2.17 GRMS (5-700 Hz)
Vibration - Non-Operating 3.13 GRMS (5-800 Hz)
Shock (Operating and Non-Operating) 1,500 G/.5 msec
Operating Temperature Range 0°C to 70°C
Mean Time Between Failures (MTBF) 1,200,000 Hours
Uncorrectable Bit Error Rate (UBER) 1 sector per 1016
-Package Specifications
Components Intel NAND Flash Memory Multi-Level Cell (MLC) Technology
Weight up to 88 ± 2 grams
Form Factor 2.5" 7mm
Interface SATA 3.0 3Gb/S
-Advanced Technologies
Enhanced Power Loss Data Protection Yes
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